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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI DESCRIPTION With TO-3PML package DARLINGTON High breakdown voltage APPLICATIONS High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage PARAMETER CONDITIONS Open base Emitter-base voltage HAN INC Collector current Collector current-peak Base current Base current-peak Total power dissipation SEM GE Open collector OND IC TOR UC VALUE 350 5 15 30 1 5 UNIT V V A A A A W ae ae TC=25ae 65 175 -65~175 Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 2.3 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU941ZPFI SYMBOL TYP. MAX UNIT VCL Clamping voltage IC=0.1 A ;IB=0 350 500 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=100m A IC=10A; IB=250m A 1.8 V Collector-emitter saturation voltage 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=300m A 2.0 V VBEsat-1 Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBEsat-3 Base-emitter saturation voltage ICEO IEBO IN Collector cut-off current IC=12A; IB=300m A VCE=300V; IB=0 TC=125ae 2.7 V Emitter cut-off current hFE DC current gain VF Diode forward voltage ANG CH EMIC ES IC=5A ; VCE=10V IF=10A VEB=5V; IC=0 DUC ON 300 TOR 0.1 0.5 20 2.5 mA mA V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU941ZPFI SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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